As a common type of structural defect, grain boundaries (GBs) play an important role in tailoring the physical and chemical properties of bulk crystals and their two-dimensional (2D) counterparts such as graphene and molybdenum disulfide (MoS2). In this study, we explore the atomic structures and dynamics of three kinds of high-symmetry GBs (α, β and γ) in monolayer MoS2. Atomic-resolution transmission electron microscopy (TEM) is used to characterize their formation and evolutionary dynamics, and atomistic simulation based analysis explains the size distribution of α-type GBs observed under TEM and the inter-GB interaction, revealing the stabilization mechanism of GBs by pre-existing sulfur vacancies. The results elucidate the correlation ...
Understanding the growth behavior and morphology evolution of defects in 2D transition metal dichalc...
Understanding the growth behavior and morphology evolution of defects in 2D transition metal dichalc...
Grain boundaries in monolayer transition metal dichalcogenides have unique atomic defect structures ...
As a common type of structural defect, grain boundaries (GBs) play an important role in tailoring th...
Grain boundaries in monolayer transition metal dichalcogenides have unique atomic defect structures ...
We have investigated atomic and electronic structure of grain boundaries in monolayer MoS2, where re...
Grain boundaries in monolayer transition metal dichalcogenides have unique atomic defect structures ...
Two-dimensional (2D) molybdenum disulfide (MoS<sub>2</sub>) has attracted significant attention rece...
Molybdenum disulfide (MoS2) has a lamellar crystal structure, which makes it ideal for use as a soli...
Structural defects govern various physical, chemical, and optoelectronic properties of two-dimension...
Structural symmetry-breaking is a key strategy to modify the physical and chemical properties of two...
Guided by the principles of dislocation theory, we use the first-principles calculations to determin...
Two-dimensional (2D) transition metal dichalcogenides (TMDs) are layered semiconductors with unique ...
Two-dimensional materials offer a remarkably rich materials platform to study the origin of differen...
Transition metal dichalcogenides (TMDs), such as MoS2 and WS2, are direct band gap semiconductors in...
Understanding the growth behavior and morphology evolution of defects in 2D transition metal dichalc...
Understanding the growth behavior and morphology evolution of defects in 2D transition metal dichalc...
Grain boundaries in monolayer transition metal dichalcogenides have unique atomic defect structures ...
As a common type of structural defect, grain boundaries (GBs) play an important role in tailoring th...
Grain boundaries in monolayer transition metal dichalcogenides have unique atomic defect structures ...
We have investigated atomic and electronic structure of grain boundaries in monolayer MoS2, where re...
Grain boundaries in monolayer transition metal dichalcogenides have unique atomic defect structures ...
Two-dimensional (2D) molybdenum disulfide (MoS<sub>2</sub>) has attracted significant attention rece...
Molybdenum disulfide (MoS2) has a lamellar crystal structure, which makes it ideal for use as a soli...
Structural defects govern various physical, chemical, and optoelectronic properties of two-dimension...
Structural symmetry-breaking is a key strategy to modify the physical and chemical properties of two...
Guided by the principles of dislocation theory, we use the first-principles calculations to determin...
Two-dimensional (2D) transition metal dichalcogenides (TMDs) are layered semiconductors with unique ...
Two-dimensional materials offer a remarkably rich materials platform to study the origin of differen...
Transition metal dichalcogenides (TMDs), such as MoS2 and WS2, are direct band gap semiconductors in...
Understanding the growth behavior and morphology evolution of defects in 2D transition metal dichalc...
Understanding the growth behavior and morphology evolution of defects in 2D transition metal dichalc...
Grain boundaries in monolayer transition metal dichalcogenides have unique atomic defect structures ...