Silicon Carbide is a wide band gap semiconductor which has recently imposed as a key material for modern power electronics. Bulk single crystals and active epilayers are industrially produced by vapor phase processes, namely seeded sublimation growth (PVT) and chemical vapor deposition (CVD) respectively. The high temperature solution growth is currently being revisited due to its potential for achieving high structural quality. This work is a contribution to the development of the top seeded solution growth (TSSG) process, with a special focus on heavily p-type doped 4H-SiC crystals. Aluminum (Al) is the most commonly used acceptor in SiC. Different elementary steps of the process are studied, and for every cases, the effect of Al is consi...
The development of new technologies to reduce energy consumption involves the use of non-conventiona...
Cette thèse porte sur l’optimisation d’un procédé de croissance, reproductible et contrôlé, d’une mo...
Fully-Depleted Silicon-On-Insulator (FD-SOI) wafers are promising substrates for new generations of ...
Silicon Carbide is a wide band gap semiconductor which has recently imposed as a key material for mo...
Silicon Carbide is a wide band gap semiconductor which has recently imposed as a key material for mo...
Le carbure de silicium est un semi-conducteur à grand gap qui s’est récemment imposé comme un matéri...
Silicon Carbide (SiC) is one of the most desirable materials for power electronic devices. The devel...
Graphene is a two-dimensional material belonging to the family of carbon allotropes, consisting of a...
Silicon Carbide (SiC) is one of the most desirable materials for power electronic devices. The devel...
La modélisation et la simulation des procédés de croissance tel que le transport physique en phase v...
Silicon carbide (SiC) is a widely used industrial ceramic because of its excellent properties which ...
Le graphène est un matériau bidimensionnel appartenant à la famille des allotropes du carbone. Il co...
Two methods are used to produce Inconel 718 by powder metallurgy (PM): metal injection molding (MIM)...
Wide bandgap semiconductor materials are able to withstand harsh environments and operate over a wid...
Wide bandgap semiconductor materials are able to withstand harsh environments and operate over a wid...
The development of new technologies to reduce energy consumption involves the use of non-conventiona...
Cette thèse porte sur l’optimisation d’un procédé de croissance, reproductible et contrôlé, d’une mo...
Fully-Depleted Silicon-On-Insulator (FD-SOI) wafers are promising substrates for new generations of ...
Silicon Carbide is a wide band gap semiconductor which has recently imposed as a key material for mo...
Silicon Carbide is a wide band gap semiconductor which has recently imposed as a key material for mo...
Le carbure de silicium est un semi-conducteur à grand gap qui s’est récemment imposé comme un matéri...
Silicon Carbide (SiC) is one of the most desirable materials for power electronic devices. The devel...
Graphene is a two-dimensional material belonging to the family of carbon allotropes, consisting of a...
Silicon Carbide (SiC) is one of the most desirable materials for power electronic devices. The devel...
La modélisation et la simulation des procédés de croissance tel que le transport physique en phase v...
Silicon carbide (SiC) is a widely used industrial ceramic because of its excellent properties which ...
Le graphène est un matériau bidimensionnel appartenant à la famille des allotropes du carbone. Il co...
Two methods are used to produce Inconel 718 by powder metallurgy (PM): metal injection molding (MIM)...
Wide bandgap semiconductor materials are able to withstand harsh environments and operate over a wid...
Wide bandgap semiconductor materials are able to withstand harsh environments and operate over a wid...
The development of new technologies to reduce energy consumption involves the use of non-conventiona...
Cette thèse porte sur l’optimisation d’un procédé de croissance, reproductible et contrôlé, d’une mo...
Fully-Depleted Silicon-On-Insulator (FD-SOI) wafers are promising substrates for new generations of ...