Growth of Hg1−xCdxTe single crystals by travelling heater method under accelerated crucible rotation conditions

The accelerated crucible rotation technique (ACRT) has been applied to the THM growth of Hg1−xCdxTe crystals to grow the crystals at a higher rate. These higher growth rates, which should be achieved by extending the regions of conventional stirring towards the interfaces, have been used in an attempt to explain the results in terms of simple constitutional supercooling arguments. Some different ACRT cycles which fulfil simple hydrodynamic and geometric criteria have been studied. The grown crystals were investigated with respect to their metallurgical homogeneity and their structural perfection. These properties have not been degraded by increasing the growth rate from 1.5 to 8.5 mm per day