A general relation between the two-probe resistance (spreading resistance) and the four-probe resistance on nonuniform resistivity structures i derived. Numerical techniques are presented and discussed for the evaluation of these equations for nonuniform structures. The r lation between the four-probe resistance, Z(x, S), and the incremental sheet resistance, ~t(x), is shown to arise in the limit as the probe spacing becomes large compared to the distance to an insulating boundary. Specific examples are drawn from calculations on implant-type structures into substrates having insulating boundaries near the end of the implanted region (junction isolation), as well as those where the insulating boundary is far from the implanted region (emula...
Purpose. To determine the contribution of the real contact spots distribution in the total conductiv...
The interpretation of spreading resistance depth profiles for submicron devices is seriously affecte...
Earlier work [T. Clarysse , Mater. Sci. Eng., B 114-115, 166 (2004); T. Clarysse , Mater. Res. Soc. ...
Fig. 12. A series of plots of the results of the calibration investi-gation for several values of th...
Extraction of contact resistivity (ρc) with the four-point probe (4PP) method requires considerably ...
In four- probe ( 4- probe) electrical measurements, especially on highly resistive materials, it is ...
A new simple model for profil ing the impurit ies within a shal low p-n junc-tion from spreading res...
Dickey had proposed a technique, known as the local slope method, for the calculation f the correcti...
The sheet resistance of thin film structures is commonly measured using a four-point-probe setup and...
A technique for determining local silicon resistivity from the measured spreading resistance associa...
A simulation on the effect of probe deviation on sheet resistivity value (Rs) of Cu/Ni thin film was...
An accurate numerical approach is presented for the evaluation of geometrical effects in four point ...
Surface conductivity is one of the key factors in judging whether the RCS (Radar Cross Section) test...
The paper proposes a simple model for contact resistance in the Berger and Kelvin structures which a...
One of the most powerful techniques of semiconductor material and process characterization is the us...
Purpose. To determine the contribution of the real contact spots distribution in the total conductiv...
The interpretation of spreading resistance depth profiles for submicron devices is seriously affecte...
Earlier work [T. Clarysse , Mater. Sci. Eng., B 114-115, 166 (2004); T. Clarysse , Mater. Res. Soc. ...
Fig. 12. A series of plots of the results of the calibration investi-gation for several values of th...
Extraction of contact resistivity (ρc) with the four-point probe (4PP) method requires considerably ...
In four- probe ( 4- probe) electrical measurements, especially on highly resistive materials, it is ...
A new simple model for profil ing the impurit ies within a shal low p-n junc-tion from spreading res...
Dickey had proposed a technique, known as the local slope method, for the calculation f the correcti...
The sheet resistance of thin film structures is commonly measured using a four-point-probe setup and...
A technique for determining local silicon resistivity from the measured spreading resistance associa...
A simulation on the effect of probe deviation on sheet resistivity value (Rs) of Cu/Ni thin film was...
An accurate numerical approach is presented for the evaluation of geometrical effects in four point ...
Surface conductivity is one of the key factors in judging whether the RCS (Radar Cross Section) test...
The paper proposes a simple model for contact resistance in the Berger and Kelvin structures which a...
One of the most powerful techniques of semiconductor material and process characterization is the us...
Purpose. To determine the contribution of the real contact spots distribution in the total conductiv...
The interpretation of spreading resistance depth profiles for submicron devices is seriously affecte...
Earlier work [T. Clarysse , Mater. Sci. Eng., B 114-115, 166 (2004); T. Clarysse , Mater. Res. Soc. ...