The evaluation of geometrical effects in four point probe measurements

An accurate numerical approach is presented for the evaluation of geometrical effects in four point probe resistivity measurements upon semiconductors. The accuracy of the approach is illustrated by comparing results obtained with correction factors tabulated for probe measurements upon circular and rectangular geometries. Correction factors are presented for measurements with a square probe array upon rectangular specimens. The effect of increasing thickness for specimens of bounded geometry is also investigated. The method allows four point probe measurements to be made not only with an arbitrary probe configuration but also upon thin specimens of an arbitrary geometry