In this paper, we present an overview of silicon nanocrystals memories. Silicon nanocrystals are as storage nodes in these memories. These devices show promising characteristics as candidates for future deep-submicron non-volatile memories. The structure and fabrication of these devices are explained at first. Then the size, density, and emission of silicon nanocrystals in nanocrystal memory device are considered. Finally, a FinFET silicon nanocrystal memory is introduced as a practical sample
Abstract: Silicon-based nanocrystals MOS memory devices with narrow channels have been fabricated. T...
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2...
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical va...
Nanocrystal memory cell are a promising candidate for the scaling of nonvolatile memories in which t...
Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an arr...
Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an arr...
This work is devoted to investigating the feasibility of engineering nanocrystals and tunnel oxide l...
This work is devoted to investigating the feasibility of engineering nanocrystals and tunnel oxide l...
Tunnel oxide thickness scaling is encountering problem for next generation flash memory device. With...
In this project, we have fabricated non-volatile memory (NVM) devices based on silicon nanocrystals...
Flash memory is the dominant nonvolatile memory technology that has been experiencing fastest market...
Nonvolatile memory devices are one of the most important components in modern electronic devices. Ma...
In the field of floating gate memory, also known as flash memory, silicon (Si) nanocrystals (NC) are...
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2...
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical va...
Abstract: Silicon-based nanocrystals MOS memory devices with narrow channels have been fabricated. T...
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2...
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical va...
Nanocrystal memory cell are a promising candidate for the scaling of nonvolatile memories in which t...
Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an arr...
Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an arr...
This work is devoted to investigating the feasibility of engineering nanocrystals and tunnel oxide l...
This work is devoted to investigating the feasibility of engineering nanocrystals and tunnel oxide l...
Tunnel oxide thickness scaling is encountering problem for next generation flash memory device. With...
In this project, we have fabricated non-volatile memory (NVM) devices based on silicon nanocrystals...
Flash memory is the dominant nonvolatile memory technology that has been experiencing fastest market...
Nonvolatile memory devices are one of the most important components in modern electronic devices. Ma...
In the field of floating gate memory, also known as flash memory, silicon (Si) nanocrystals (NC) are...
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2...
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical va...
Abstract: Silicon-based nanocrystals MOS memory devices with narrow channels have been fabricated. T...
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2...
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical va...