Localized charge storage in nanocrystal memories: Feasibility of a multi-bit cell
- Corso, D.
- Crupi, I.
- Ancarani, V.
- Ammendola, G.
- Molas, G.
- Perniola, L.
- Lombardo, S.
- Gerardi, C.
- De Salvo, B.
Publication date
January 2003
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cell for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed
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