Unipolar Resistive Switching Memory Characteristics Using IrOx/Al2O3/SiO2/p-Si MIS Structure

Unipolar resistive switching memory characteristics using high-κ Al2O3 film in an IrOx/Al2O3/SiO2/p-Si metal-insulator-semiconductor (MIS) structure have been investigated. The devices show hysteresis memory window of ~0.9 V with a sweeping gate voltage of ±6V, which proves charge trapping phenomena of the Al2O3 film. A sufficiently large resistance ratio of ~103 at a self limited current compliance of 100 μA is obtained, due to the defective Al2O3 film. A large resistance ratio of>103 after 10 years of data retention is obtained for future nanoscale nonvolatile memory application