Add to ORKGNew method of carrier lifetime measurement is proposed for accurate power device simulation which requires the values of independent electron (%) and hole ( ) lifetimes. Reverse recovery time and the electron beam-induced junction current of Si p M diodes were measured to obtain the high injection carrier lifetimes (%) and %, respectively. 5 were deduced by extracting?i, from % on the basis of Shokley-Read-Hal1 theory. % of the non-irradiated samples and samples irradiated at electron fluxes o
AbstractAccurate modeling of the intrinsic recombination in silicon is important for device simulati...
A new accurate method for simulation of the device that is subjected to low-dose high-energy ion irr...
Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production...
In this letter, the first experimental results of a recently proposed technique for measuring the c...
Les mesures de décroissance du courant induit (E.B.I.C.) généré par un faisceau d'électrons près d'u...
In this letter, the first experimental results of a recently proposed technique for measuring the ca...
A theoretical steady state analysis is given of the scanning electron microscope method of measuring...
A transient analysis of an SEM experiment is given with the purpose of determining directly the life...
Injection-dependent minority carrier lifetime measurements are a valuable characterisation method fo...
A new technique for calculation of correct carrier recombination lifetime in intrinsic layer of sili...
Differential light-biased dynamic measurements of charge carrier recombination properties in semicon...
AbstractDark, gamma-induced conductivities and conductivity modulation in silicon material will be i...
The project is directed to the study and to the characterization of the most advanced lifetime contr...
Usual methods for carrier-lifetime measurements in PIN structures give effective carrier-lifetimes c...
The use of gold, platinum and electron irradiation induced defects as recombination centers in silic...
AbstractAccurate modeling of the intrinsic recombination in silicon is important for device simulati...
A new accurate method for simulation of the device that is subjected to low-dose high-energy ion irr...
Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production...
In this letter, the first experimental results of a recently proposed technique for measuring the c...
Les mesures de décroissance du courant induit (E.B.I.C.) généré par un faisceau d'électrons près d'u...
In this letter, the first experimental results of a recently proposed technique for measuring the ca...
A theoretical steady state analysis is given of the scanning electron microscope method of measuring...
A transient analysis of an SEM experiment is given with the purpose of determining directly the life...
Injection-dependent minority carrier lifetime measurements are a valuable characterisation method fo...
A new technique for calculation of correct carrier recombination lifetime in intrinsic layer of sili...
Differential light-biased dynamic measurements of charge carrier recombination properties in semicon...
AbstractDark, gamma-induced conductivities and conductivity modulation in silicon material will be i...
The project is directed to the study and to the characterization of the most advanced lifetime contr...
Usual methods for carrier-lifetime measurements in PIN structures give effective carrier-lifetimes c...
The use of gold, platinum and electron irradiation induced defects as recombination centers in silic...
AbstractAccurate modeling of the intrinsic recombination in silicon is important for device simulati...
A new accurate method for simulation of the device that is subjected to low-dose high-energy ion irr...
Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production...