Modeling of Localized Lifetime Tailoring in Silicon Devices

A new accurate method for simulation of the device that is subjected to low-dose high-energy ion irradiation (hydrogen, helium) is compared with the ordinary simulation technique which utilizes a structured lifetime profile as an input into SRH recombination model. The novel method, involving ion-implantation process simulator, expert system, and multilevel recombination model is described. Spatial distribution of the minority carrier lifetime of irradiated device is drawn for different injection levels. Simulated trade-off between forward voltage drop and reverse recovery time is presented for both the hydrogen and helium irradiation. 1