Add to ORKGThis paper presents a compact direct tunneling current model for circuit simulation to predict ultra-thin gate oxide ( 2.0 nm) CMOS circuit performance by introducing the explicit sur-face potential model and quantum-mechanical corrections. It demonstrates good agreements with the results from the nu-merical solver and measured data for the very-thin gate oxide thicknesses ranging 1.3 – 1.8 nm
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
Direct and Fowler-Nordheim tunneling through ultra-thin gate dielectrics is modeled based on a new a...
The gate oxide of sub-0.1 µm MOSFETs channel length is expected to be reduced beyond 3 nm in spite o...
An efficient direct tunneling current model is presented for the ultra thin gate dielectric MOS stru...
[[abstract]]As MOSFETs are scaled, the gate oxide thickness is becoming smaller and smaller. Gate tu...
Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable sh...
Abstract—A semi-empirical model is proposed to quantify the tunneling currents through ultrathin gat...
The major sources of power dissipation in a nanometer CMOS circuit are capacitive switching, short-c...
Ultra-thin gate dielectrics are exploited in fabrication of MOSFETs featuring channel lengths in the...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
An empirical expression for the direct tunneling (DT) current is obtained. This expression can be us...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
Gate currents are becoming a major concern for ULSI circuit designers. A standard circuit design flo...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
Direct and Fowler-Nordheim tunneling through ultra-thin gate dielectrics is modeled based on a new a...
The gate oxide of sub-0.1 µm MOSFETs channel length is expected to be reduced beyond 3 nm in spite o...
An efficient direct tunneling current model is presented for the ultra thin gate dielectric MOS stru...
[[abstract]]As MOSFETs are scaled, the gate oxide thickness is becoming smaller and smaller. Gate tu...
Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable sh...
Abstract—A semi-empirical model is proposed to quantify the tunneling currents through ultrathin gat...
The major sources of power dissipation in a nanometer CMOS circuit are capacitive switching, short-c...
Ultra-thin gate dielectrics are exploited in fabrication of MOSFETs featuring channel lengths in the...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
An empirical expression for the direct tunneling (DT) current is obtained. This expression can be us...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
Gate currents are becoming a major concern for ULSI circuit designers. A standard circuit design flo...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
Direct and Fowler-Nordheim tunneling through ultra-thin gate dielectrics is modeled based on a new a...
The gate oxide of sub-0.1 µm MOSFETs channel length is expected to be reduced beyond 3 nm in spite o...