Abstract—We simulate the precipitation of iron during the mul-ticrystalline ingot crystallization process and the redistribution of iron during subsequent phosphorus diffusion gettering with a 2-D model. We compare the simulated size distribution of the precipi-tates with the X-ray fluorescence microscopy measurements of iron precipitates along a grain boundary. We find that the simulated and measured densities of precipitates larger than the experimen-tal detection limit are in good agreement after the crystallization process. Additionally, we demonstrate that the measured decrease of the line density and the increase of the mean size of the iron pre-cipitates after phosphorus diffusion gettering can be reproduced with the simulations. The...
Crystalline silicon solar cells are a proven renewable energy technology, but they have yet to reach...
The extraction of metal impurities during phosphorus diffusion gettering (PDG) is one of the crucial...
The material quality of multicrystalline silicon is influenced by crystal defects and contaminations...
We simulate the precipitation of iron during the multicrystalline ingot crystallization process and ...
Precipitation of iron in multicrystalline (mc) silicon during typical solar cell processing is inves...
Simulation of solar cell processing enables inexpensive and rapid process optimization. Over the las...
An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during...
Abstract. In multicrystalline silicon for photovoltaic applications, high concentrations of iron are...
Abstract—Customized solar cell processing based on input material quality has the potential to incre...
The behavior of iron in multicrystalline silicon during solar cell processing is analyzed by spatial...
The evolution during silicon solar cell processing of performance-limiting iron impurities is invest...
A phosphorus diffusion gettering model is used to examine the efficacy of a standard gettering proce...
The impact of iron point defects on the measured injection-dependent minority carrier lifetime in si...
Experiments have been conducted to understand the behaviour of iron in silicon containing oxide prec...
Experiments have been conducted to understand the behaviour of iron in silicon containing oxide prec...
Crystalline silicon solar cells are a proven renewable energy technology, but they have yet to reach...
The extraction of metal impurities during phosphorus diffusion gettering (PDG) is one of the crucial...
The material quality of multicrystalline silicon is influenced by crystal defects and contaminations...
We simulate the precipitation of iron during the multicrystalline ingot crystallization process and ...
Precipitation of iron in multicrystalline (mc) silicon during typical solar cell processing is inves...
Simulation of solar cell processing enables inexpensive and rapid process optimization. Over the las...
An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during...
Abstract. In multicrystalline silicon for photovoltaic applications, high concentrations of iron are...
Abstract—Customized solar cell processing based on input material quality has the potential to incre...
The behavior of iron in multicrystalline silicon during solar cell processing is analyzed by spatial...
The evolution during silicon solar cell processing of performance-limiting iron impurities is invest...
A phosphorus diffusion gettering model is used to examine the efficacy of a standard gettering proce...
The impact of iron point defects on the measured injection-dependent minority carrier lifetime in si...
Experiments have been conducted to understand the behaviour of iron in silicon containing oxide prec...
Experiments have been conducted to understand the behaviour of iron in silicon containing oxide prec...
Crystalline silicon solar cells are a proven renewable energy technology, but they have yet to reach...
The extraction of metal impurities during phosphorus diffusion gettering (PDG) is one of the crucial...
The material quality of multicrystalline silicon is influenced by crystal defects and contaminations...