Simulation of solar cell processing enables inexpensive and rapid process optimization. Over the last twenty years, several models describing the distribution and behavior of iron point defects and iron-silicide precipitates have been developed and incorporated into process simulations. The goal of this work is to elucidate what physics are needed to accurately describe industry-relevant as-grown impurity and defect distributions and processing conditions by simulating different material-processing combinations with each model. This rigorous comparison helps scientists and engineers choose the appropriate level of model complexity, and consequently simulation run time, based on material characteristics and processing conditions.Peer reviewe
The behavior of iron in multicrystalline silicon during solar cell processing is analyzed by spatial...
To optimize the last high temperature step of a standard solar cell fabrication process (the contact...
In this paper, a model is presented for boron diffusion gettering of iron in silicon during thermal ...
Simulation of solar cell processing enables inexpensive and rapid process optimization. Over the las...
An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during...
An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during...
An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during...
An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during...
Abstract—We simulate the precipitation of iron during the mul-ticrystalline ingot crystallization pr...
We simulate the precipitation of iron during the multicrystalline ingot crystallization process and ...
A model is presented for the growth and dissolution of iron precipitates at oxygen-related defects i...
In this paper, a model is presented for boron diffusion gettering of iron in silicon during thermal ...
Precipitation of iron in multicrystalline (mc) silicon during typical solar cell processing is inves...
A phosphorus diffusion gettering model is used to examine the efficacy of a standard gettering proce...
Abstract. In multicrystalline silicon for photovoltaic applications, high concentrations of iron are...
The behavior of iron in multicrystalline silicon during solar cell processing is analyzed by spatial...
To optimize the last high temperature step of a standard solar cell fabrication process (the contact...
In this paper, a model is presented for boron diffusion gettering of iron in silicon during thermal ...
Simulation of solar cell processing enables inexpensive and rapid process optimization. Over the las...
An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during...
An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during...
An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during...
An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during...
Abstract—We simulate the precipitation of iron during the mul-ticrystalline ingot crystallization pr...
We simulate the precipitation of iron during the multicrystalline ingot crystallization process and ...
A model is presented for the growth and dissolution of iron precipitates at oxygen-related defects i...
In this paper, a model is presented for boron diffusion gettering of iron in silicon during thermal ...
Precipitation of iron in multicrystalline (mc) silicon during typical solar cell processing is inves...
A phosphorus diffusion gettering model is used to examine the efficacy of a standard gettering proce...
Abstract. In multicrystalline silicon for photovoltaic applications, high concentrations of iron are...
The behavior of iron in multicrystalline silicon during solar cell processing is analyzed by spatial...
To optimize the last high temperature step of a standard solar cell fabrication process (the contact...
In this paper, a model is presented for boron diffusion gettering of iron in silicon during thermal ...