On Enhanced Miller Capacitance Effect in Interband Tunnel Transistors

Abstract—We compare the transient response of double-gate thin-body-silicon interband tunnel field-effect transistor (TFET) with its metal–oxide–semiconductor field-effect transistor coun-terpart. Due to the presence of source side tunneling barrier, the silicon TFETs exhibit enhanced Miller capacitance, resulting in large voltage overshoot/undershoot in its large-signal switch-ing characteristics. This adversely impacts the performance of Si TFETs for digital logic applications. It is shown that TFETs based on lower bandgap and lower density of states materials like indium arsenide show significant improvement in switching behavior due to its lower capacitance and higher ON current at reduced voltages. Index Terms—Density of states (DOS), InAs, metal–oxide– semiconductor field-effect transistors (FETs) (MOSFETs), Miller capacitance, silicon, tunnel FETs (TFETs). I