Add to ORKGomplementary metal!oxide!semi-conductor (CMOS) scaling is turning into one of the most challenging problems that the electronics industry has come across in decades. Scaling procedures should be able to achieve the same electric-field pattern in a smaller transistor while reducing the supply voltage.1 Among all the device candidates for conventional CMOS replacement, excellent electrostatic conditions and band gap engineering capa-bilitiesmake nanowire field-effect transistors (NWFETs) a promising choice for future electronics.2 NWFETs with large Bohr radius channel materials such as InAs3 are particu
This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FE...
The aggressive downsizing of the transistor will continue for atleast another decade. The critical f...
Since the invention of the transistor, the fundamental element of the integrated circuit (IC) in 196...
CMOS transistor scaling has driven the phenome-nal success of the semiconductor industry, delivering...
Smaller-diameter semiconductor nanowires (NWs) are appropriate for electronic applications due to th...
We report a comparative study of the electronic properties of nominally identical nanowire field-eff...
As the dimensions of transistors shrink, the close proximity between the source and drain reduces th...
Since the introduction of the transistor and the integrated circuit, the semiconductor industry has ...
We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. T...
The background of this thesis is related to the steadily increasing demand of higher bandwidth and l...
The increasing difficulty in the scaling of Complementary Metal Oxide Semiconductor (CMOS) devices h...
Semiconductor nanowires have been explored as alternative electronic materials for high performance ...
This contribution discusses scaling aspects of individually gated nanowire Schottky junctions which ...
been guided by CMOS scaling theory [1] and predications made by Semiconductor Industry (SIA) in the ...
We compare the electronic characteristics of nanowire field-effect transistors made using single pur...
This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FE...
The aggressive downsizing of the transistor will continue for atleast another decade. The critical f...
Since the invention of the transistor, the fundamental element of the integrated circuit (IC) in 196...
CMOS transistor scaling has driven the phenome-nal success of the semiconductor industry, delivering...
Smaller-diameter semiconductor nanowires (NWs) are appropriate for electronic applications due to th...
We report a comparative study of the electronic properties of nominally identical nanowire field-eff...
As the dimensions of transistors shrink, the close proximity between the source and drain reduces th...
Since the introduction of the transistor and the integrated circuit, the semiconductor industry has ...
We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. T...
The background of this thesis is related to the steadily increasing demand of higher bandwidth and l...
The increasing difficulty in the scaling of Complementary Metal Oxide Semiconductor (CMOS) devices h...
Semiconductor nanowires have been explored as alternative electronic materials for high performance ...
This contribution discusses scaling aspects of individually gated nanowire Schottky junctions which ...
been guided by CMOS scaling theory [1] and predications made by Semiconductor Industry (SIA) in the ...
We compare the electronic characteristics of nanowire field-effect transistors made using single pur...
This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FE...
The aggressive downsizing of the transistor will continue for atleast another decade. The critical f...
Since the invention of the transistor, the fundamental element of the integrated circuit (IC) in 196...