Add to ORKGWe report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100. © 2010 IEEE
n past decades, due to their unique physical properties, IIIV semiconductor nanowires (NWs) have att...
Single-crystal InAs nanowires (NWs) are synthesized using ACHTUNGTRENNUNGmetal– organic chemical vap...
InSb nanowires have been formed by electrodeposition in porous anodic alumina templates and employed...
We report a comparative study of the electronic properties of nominally identical nanowire field-eff...
We compare the electronic characteristics of nanowire field-effect transistors made using single pur...
We have studied the electronic transport characteristics of nanowire field effect transistors (NWFET...
We have studied the electronic transport characteristics of nanowire field effect transistors (NWFET...
Since the introduction of the transistor and the integrated circuit, the semiconductor industry has ...
The advent of semiconducting nanowires has initiated research in many areas. The bottom-up growth ca...
We report a systematic study on the correlation of the electrical transport properties with the crys...
This project was dedicated to the development of solution-processed nanomaterials-based high-perform...
any 1D nanoscale objects experi-ence significant variations in their crystal structure along the gro...
The background of this thesis is related to the steadily increasing demand of higher bandwidth and l...
In the last few years, the leading semiconductor industries have introduced multi-gate non-planar tr...
This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FE...
n past decades, due to their unique physical properties, IIIV semiconductor nanowires (NWs) have att...
Single-crystal InAs nanowires (NWs) are synthesized using ACHTUNGTRENNUNGmetal– organic chemical vap...
InSb nanowires have been formed by electrodeposition in porous anodic alumina templates and employed...
We report a comparative study of the electronic properties of nominally identical nanowire field-eff...
We compare the electronic characteristics of nanowire field-effect transistors made using single pur...
We have studied the electronic transport characteristics of nanowire field effect transistors (NWFET...
We have studied the electronic transport characteristics of nanowire field effect transistors (NWFET...
Since the introduction of the transistor and the integrated circuit, the semiconductor industry has ...
The advent of semiconducting nanowires has initiated research in many areas. The bottom-up growth ca...
We report a systematic study on the correlation of the electrical transport properties with the crys...
This project was dedicated to the development of solution-processed nanomaterials-based high-perform...
any 1D nanoscale objects experi-ence significant variations in their crystal structure along the gro...
The background of this thesis is related to the steadily increasing demand of higher bandwidth and l...
In the last few years, the leading semiconductor industries have introduced multi-gate non-planar tr...
This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FE...
n past decades, due to their unique physical properties, IIIV semiconductor nanowires (NWs) have att...
Single-crystal InAs nanowires (NWs) are synthesized using ACHTUNGTRENNUNGmetal– organic chemical vap...
InSb nanowires have been formed by electrodeposition in porous anodic alumina templates and employed...