Single Electron transistor have high integration density, ultra-low power dissipation, ultra-small size, unique coulomb blockade oscillation characteristics which makes an attractive technology for future low power VLSI/ULSI systems. The Single Electron Transistor have extremely poor driving capabilities so that direct application to practical circuits is a yet almost impossible, to overcome this problem and to investigate the robustness and fastness of the novel design, the hybrid circuits of SET and CMOS are builded. In this work, novel design of SET-CMOS of Half Subtractor and Full Subtractor circuits are designed
The goal of this paper is to review in brief the basic physics of nanoelectronic device single-elect...
We propose a complementary self-biasing method which enables the single-electron transistor (SET)/co...
Single-electron transistors (SETs) provide current conduction characteristics comparable to CMOS tec...
Single Electron Transistor is a hot cake in the present research area of VLSI design and Microelectr...
A practical single electron transistor (SET) model has been proposed with appropriate modifications ...
For the next generation VLSI circuits with high density, the most efficient device that can be used ...
Novel single-electron transistors (SETs) with side-wall depletion gates on a silicon-on-insulator na...
The urge of inventing a new low power consuming device for the post CMOS future technology has drawn...
Single electron transistor is a nanoelectronic three terminal device. It provides current conduction...
The purpose of this thesis is to research the possibility of realizing hardware support for hybrid s...
Cette étude porte sur l’intégration hybride de transistors à un électron (single-electron transistor...
We have investigated design considerations for low-power single-electron transistor (SET) logic circ...
The single electron transistor (SET) is a charge-based device that may complement the dominant metal...
Heterogeneous 3D integration of single electron transistor (SET) circuits with CMOS based circuits i...
The goal of this paper is to review in brief the basic physics of nanoelectronic device single-elect...
The goal of this paper is to review in brief the basic physics of nanoelectronic device single-elect...
We propose a complementary self-biasing method which enables the single-electron transistor (SET)/co...
Single-electron transistors (SETs) provide current conduction characteristics comparable to CMOS tec...
Single Electron Transistor is a hot cake in the present research area of VLSI design and Microelectr...
A practical single electron transistor (SET) model has been proposed with appropriate modifications ...
For the next generation VLSI circuits with high density, the most efficient device that can be used ...
Novel single-electron transistors (SETs) with side-wall depletion gates on a silicon-on-insulator na...
The urge of inventing a new low power consuming device for the post CMOS future technology has drawn...
Single electron transistor is a nanoelectronic three terminal device. It provides current conduction...
The purpose of this thesis is to research the possibility of realizing hardware support for hybrid s...
Cette étude porte sur l’intégration hybride de transistors à un électron (single-electron transistor...
We have investigated design considerations for low-power single-electron transistor (SET) logic circ...
The single electron transistor (SET) is a charge-based device that may complement the dominant metal...
Heterogeneous 3D integration of single electron transistor (SET) circuits with CMOS based circuits i...
The goal of this paper is to review in brief the basic physics of nanoelectronic device single-elect...
The goal of this paper is to review in brief the basic physics of nanoelectronic device single-elect...
We propose a complementary self-biasing method which enables the single-electron transistor (SET)/co...
Single-electron transistors (SETs) provide current conduction characteristics comparable to CMOS tec...