We have investigated design considerations for low-power single-electron transistor (SET) logic circuits. Supply-voltage scaling is introduced as a method for reducing the power consumption of SET circuits. A detailed analysis of the effects of supply-voltage scaling is given on the basis of the behavior of a complementary capacitively coupled SET inverter circuit. It has been shown that the hysteresis caused by the supply-voltage-dependent threshold voltage of a SET quickly disappears as the temperature rises, and does not ruin the desired inverting operation at a practical operation temperature. Also shown is the considerable impact of the supply-voltage scaling on reducing the power expended by leakage and short-circuit. From the results...
Enabled by technology scaling, ultra low-voltage devices have now found wide application in modern V...
[[abstract]]The advent of portable and high-density devices has made power consumption a critical de...
A practical single electron transistor (SET) model has been proposed with appropriate modifications ...
According to the rules of quantum mechanics there is a non-vanishing probability of for an electron ...
One of the most effective ways to design low power circuits is to use low power supply voltages. If ...
The demand of extremely long battery life for electronic devices is the driving force for modern sem...
For the next generation VLSI circuits with high density, the most efficient device that can be used ...
Driven by the battery-operated applications in portable devices, circuit design techniques for reduc...
The Single Electron Transistor (SET) is a nanoscale three terminal device that provides current cond...
In this paper, the effects of energy quantization on different single-electron transistor (SET) ci...
In this paper, for the first time, the effects of energy quantization on single electron transistor ...
Possible integration of Single Electron Transistor (SET)\ud with CMOS technology is making the study...
Technology scaling according to Moore???s law has resulted in the development of\ud integrated chips...
(SET) devices operating at room temperature as an attractive option to implement low energy consumpt...
Ultra-low voltage digital circuit design is an active research area, especially for portable applica...
Enabled by technology scaling, ultra low-voltage devices have now found wide application in modern V...
[[abstract]]The advent of portable and high-density devices has made power consumption a critical de...
A practical single electron transistor (SET) model has been proposed with appropriate modifications ...
According to the rules of quantum mechanics there is a non-vanishing probability of for an electron ...
One of the most effective ways to design low power circuits is to use low power supply voltages. If ...
The demand of extremely long battery life for electronic devices is the driving force for modern sem...
For the next generation VLSI circuits with high density, the most efficient device that can be used ...
Driven by the battery-operated applications in portable devices, circuit design techniques for reduc...
The Single Electron Transistor (SET) is a nanoscale three terminal device that provides current cond...
In this paper, the effects of energy quantization on different single-electron transistor (SET) ci...
In this paper, for the first time, the effects of energy quantization on single electron transistor ...
Possible integration of Single Electron Transistor (SET)\ud with CMOS technology is making the study...
Technology scaling according to Moore???s law has resulted in the development of\ud integrated chips...
(SET) devices operating at room temperature as an attractive option to implement low energy consumpt...
Ultra-low voltage digital circuit design is an active research area, especially for portable applica...
Enabled by technology scaling, ultra low-voltage devices have now found wide application in modern V...
[[abstract]]The advent of portable and high-density devices has made power consumption a critical de...
A practical single electron transistor (SET) model has been proposed with appropriate modifications ...