Ordered arrays of <100>-oriented silicon nanorods by CMOS-Compatible block copolymer lithography. Nano Letters, 7(6):1516–1520. te l-0 8, v er sio n - 2 Fe b Communications during this thesis Peer-reviewed journal articles

Dense, ordered arrays of 〈100〉-oriented Si nanorods with uniform aspect ratios up to 5:1 and a uniform diameter of 15 nm were fabricated by block copolymer lithography based on the inverse of the traditional cylindrical hole strategy and reactive ion etching. The reported approach combines control over diameter, orientation, and position of the nanorods and compatibility with complementary metal oxide semiconductor (CMOS) technology because no nonvolatile metals generating deep levels in silicon, such as gold or iron, are involved. The Si nanorod arrays exhibit the same degree of order as the block copolymer templates. One-dimensional (1D) semiconductor nanostructures exhibit electronic, optical, chemical, mechanical, and thermal prop-erties that depend on their diameter and on their growth direction.1 Silicon (Si) nanowires are of particular interest, as state-of-the-art semiconductor technology is still based on this material. Two strategies for the fabrication of assemblies of Si nanowires have been investigated: vapor-liquid-solid (VLS) growth, and combinations of block copolymer (BCP) lithography and reactive ion etching (RIE)