Poster

The production of low-dimensional nanostructures and the study of their peculiar electronic and optical properties is a hot topic attracting growing interest in the scientific community. In particular, monodimensional (1D) nanowires are under investigation for their potential use for the achievement of nanosized electronic devices. One method for realizing such nanostructures is the so-called bottom-up approach. In our case, silicon nanowires are obtained by self assembly of silicon deposited on the Ag(110) surface. The immiscibility of silicon and silver ensures that no silicides are formed at the surface, while the anisotropy of the substrate acts as a template for the formation of such monodimensional nanostructures. A partially covered surface shows isolated nanowires all oriented in the same [-110] direction with an internal periodicity of about 0.58 nm along the wire (2 times the substrate periodicity in the [-110] direction), and characterized by well defined widths of about 0.8 and 1.6 nm (2 or 4 times the substrate periodicity in the [001] direction). The fully covered surface shows a very highly ordered crystallographic structure in which 1.6 nm wide parallel nanowires are packed in a 5x periodicity in the [001] direction (perpendicular to the wire). [1-3] Synchrotron radiation Photoemission Spectroscopy results confirm the highly ordere