Responsivity measurements have been performed on commercial silicon photodetectors in the UV range 200–400 nm. The microstrip and pixel detectors have been reverse biased in fully depleted condition (more than 25V reverse bias) and in partially depleted condition (5V reverse bias). We have also performed measurements in back illumination geometry, of particular interest in most industrial applications. Promising results obtained with commercial photodetectors in the UV range in terms of photocurrent stability and sensitivity open a variety of applications
Modern particle physics at colliders demands for a continuous increase of the luminosityfor collidin...
Silicon Photomultipliers with cell-pitch ranging from 12 μm to 20 μm were tested against neutron irr...
The article presents selected issues of UV detectors’ diagnostics. When choosing the UV detector to ...
Abstract Responsivity measurements have been performed on commercial silicon photodetectors in the...
The responsivity of a type 6H-SiC photodiode in the 1.5-400 nm wavelength range was measured using s...
Silicon PIN photodiodes were fabricated with 250 nm SiO2 antireflective coating (ARC). The changes i...
We report on the design and the electro-optical characterization of new classes of 4H-SiC Schottky U...
In recent work, a novel silicon-based photodiode technology was reported to be suitable for producin...
The advent of cryogenic radiometers for the determination of detector responsivity at single wavelen...
We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical...
The ATLAS collaboration R&D group “Development of n-in-p Silicon Sensors for very high radiation...
We present some results on the optical characterization of Silicon Photomultipliers designed for med...
We report the electrical and optical comparison, in continuous wave regime, of two novel classes of ...
AbstractThis paper reports the spectral responsivity of black silicon photodetector in a spectral ra...
We report on the electrical and optical characterization, in continuous wave regime, of a novel cla...
Modern particle physics at colliders demands for a continuous increase of the luminosityfor collidin...
Silicon Photomultipliers with cell-pitch ranging from 12 μm to 20 μm were tested against neutron irr...
The article presents selected issues of UV detectors’ diagnostics. When choosing the UV detector to ...
Abstract Responsivity measurements have been performed on commercial silicon photodetectors in the...
The responsivity of a type 6H-SiC photodiode in the 1.5-400 nm wavelength range was measured using s...
Silicon PIN photodiodes were fabricated with 250 nm SiO2 antireflective coating (ARC). The changes i...
We report on the design and the electro-optical characterization of new classes of 4H-SiC Schottky U...
In recent work, a novel silicon-based photodiode technology was reported to be suitable for producin...
The advent of cryogenic radiometers for the determination of detector responsivity at single wavelen...
We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical...
The ATLAS collaboration R&D group “Development of n-in-p Silicon Sensors for very high radiation...
We present some results on the optical characterization of Silicon Photomultipliers designed for med...
We report the electrical and optical comparison, in continuous wave regime, of two novel classes of ...
AbstractThis paper reports the spectral responsivity of black silicon photodetector in a spectral ra...
We report on the electrical and optical characterization, in continuous wave regime, of a novel cla...
Modern particle physics at colliders demands for a continuous increase of the luminosityfor collidin...
Silicon Photomultipliers with cell-pitch ranging from 12 μm to 20 μm were tested against neutron irr...
The article presents selected issues of UV detectors’ diagnostics. When choosing the UV detector to ...