Reliability studies on Si PIN photodiodes under Co-60 gamma radiation
- Prabhakara Rao, Y. P.
- Praveen, K. C.
- Rani, Y. R.
- Gnana Prakash, A. P.
DOIAbstract
Silicon PIN photodiodes were fabricated with 250 nm SiO2 antireflective coating (ARC). The changes in the electrical characteristics, capacitance-voltage characteristics and spectral response after gamma irradiation are systematically studied to estimate the radiation tolerance up to 10 Mrad. The different characteristics studied in this investigation demonstrate that Si PIN photodiodes are suitable for high radiation environment
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