A picosecond photodetector has been simulated by means of the Monte Carlo particle model. The detector consists of a 2 |im film of n-type GaAs, doped uniformly with 1 0 " donors m~"3. The film is covered with metal strips 2 pxti apart. Every second strip is equally biased, the others earthed. The simulated response to a femtosecond flash is a current which peaks after about 1 ps, and dies down within 10 ps. No current is observed for biases below a threshold of IV. This device promises therefore to be operable for pulses at frequencies up to 100 GHz. The flash generates a stationary electron-hole plasma, only a few carriers escape to form the response current pulse. The remainder of the plasma will eventually be eliminated by reco...
The goal of this lecture is to provide basic information on the role of computer simulations in the ...
The aim of this work was to characterize and modelize a semiconductor photoswitch device that can ge...
In this thesis the work will focus on the modelling of highly pixellated solid-state devices. Result...
Interdigitated GaAs metal-semiconductor-metal Schottky photodiodes have been studied experimentally ...
mailto:vt11eonas($cc.uoa.gr In the present work we have conducted theoretical calculations of the tr...
Large increases in conductivity induced in GaAs and other semiconductors by photoionization allow fa...
We present a comprehensive theoretical and experimental analysis of the current response of GaAs met...
Semi-insulating gallium arsenide (SI-GaAs) detectors, in the form of Schottky diodes, have been irra...
Photoconductive and electro-optic sampling of the photocurrent of GaAs metal-semiconductor-metal pho...
Photoconductive and electro-optic sampling of the photocurrent of GaAs metal-semiconductor-metal- ph...
Monte Carlo methods are used to study photoconductive transients in gallium arsenide. It is demonstr...
Ultra-high-frequency response of interdigitated metal-semiconductor-metal photodiodes with GaAs abso...
Instruments designed to record high-intensity gamma-ray flashes must have fast time response, wide d...
We have developed a full simulation code to evaluate the response of silicon strip detectors (SSDs) ...
Photoconductive and electro-optic sampling of the photocurrent of GaAs metal - semiconductor-metal p...
The goal of this lecture is to provide basic information on the role of computer simulations in the ...
The aim of this work was to characterize and modelize a semiconductor photoswitch device that can ge...
In this thesis the work will focus on the modelling of highly pixellated solid-state devices. Result...
Interdigitated GaAs metal-semiconductor-metal Schottky photodiodes have been studied experimentally ...
mailto:vt11eonas($cc.uoa.gr In the present work we have conducted theoretical calculations of the tr...
Large increases in conductivity induced in GaAs and other semiconductors by photoionization allow fa...
We present a comprehensive theoretical and experimental analysis of the current response of GaAs met...
Semi-insulating gallium arsenide (SI-GaAs) detectors, in the form of Schottky diodes, have been irra...
Photoconductive and electro-optic sampling of the photocurrent of GaAs metal-semiconductor-metal pho...
Photoconductive and electro-optic sampling of the photocurrent of GaAs metal-semiconductor-metal- ph...
Monte Carlo methods are used to study photoconductive transients in gallium arsenide. It is demonstr...
Ultra-high-frequency response of interdigitated metal-semiconductor-metal photodiodes with GaAs abso...
Instruments designed to record high-intensity gamma-ray flashes must have fast time response, wide d...
We have developed a full simulation code to evaluate the response of silicon strip detectors (SSDs) ...
Photoconductive and electro-optic sampling of the photocurrent of GaAs metal - semiconductor-metal p...
The goal of this lecture is to provide basic information on the role of computer simulations in the ...
The aim of this work was to characterize and modelize a semiconductor photoswitch device that can ge...
In this thesis the work will focus on the modelling of highly pixellated solid-state devices. Result...