Add to ORKGUltra-high-frequency response of interdigitated metal-semiconductor-metal photodiodes with GaAs absorbing layer is studied using an ensemble Monte Carlo particle method
The model-based prediction of the response characteristics of a terahertz photomixer from the excita...
International audienceTo qualify the feasibility of standard semiconductor materials and Schottky-ba...
A semi-classical Monte Carlo simulation of carrier dynamics in photoconductive detectors of terahert...
A picosecond photodetector has been simulated by means of the Monte Carlo particle model. The detect...
In this paper, the terahertz (THz) detection based on Silicon MOSFET is investigated with two-dimens...
The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terah...
The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terah...
A three-dimensional semiclassical Monte Carlo model is presented to describe fast carrier dynamics i...
Photoconductive and electro-optic sampling of the photocurrent of GaAs metal-semiconductor-metal- ph...
The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terah...
We demonstrate an Ensemble Monte Carlo (EMC) modeling approach for robust and rigorous simulations o...
The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terah...
Abstract. Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerabl...
The discovery that short pulses of near-infrared radiation striking a semiconductor may lead to emis...
The model-based prediction of the response characteristics of a terahertz photomixer from the excita...
The model-based prediction of the response characteristics of a terahertz photomixer from the excita...
International audienceTo qualify the feasibility of standard semiconductor materials and Schottky-ba...
A semi-classical Monte Carlo simulation of carrier dynamics in photoconductive detectors of terahert...
A picosecond photodetector has been simulated by means of the Monte Carlo particle model. The detect...
In this paper, the terahertz (THz) detection based on Silicon MOSFET is investigated with two-dimens...
The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terah...
The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terah...
A three-dimensional semiclassical Monte Carlo model is presented to describe fast carrier dynamics i...
Photoconductive and electro-optic sampling of the photocurrent of GaAs metal-semiconductor-metal- ph...
The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terah...
We demonstrate an Ensemble Monte Carlo (EMC) modeling approach for robust and rigorous simulations o...
The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terah...
Abstract. Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerabl...
The discovery that short pulses of near-infrared radiation striking a semiconductor may lead to emis...
The model-based prediction of the response characteristics of a terahertz photomixer from the excita...
The model-based prediction of the response characteristics of a terahertz photomixer from the excita...
International audienceTo qualify the feasibility of standard semiconductor materials and Schottky-ba...
A semi-classical Monte Carlo simulation of carrier dynamics in photoconductive detectors of terahert...