Résumé. 2014 Nous présentons les premiers résultats de recuit de résistivité pour des couches minces d’aluminium après implantation d’ions Al, H et O à des températures inférieures à 6 K. La courbe de recuit après implantation d’ions Al est semblable à celle obtenue après irradiation aux neutrons. L’implantation d’ions H à faible dose fait apparaitre deux pics très marqués au stade I du recuit. Après implantation de fortes doses d’hydrogène, la courbe de recuit indique la possibilité d’un ordre des ions H ou bien d’une transformation de phase. Abstract. 2014 We present the first resistivity annealing curves of Al after implantation of Al-, H-, and O-ions at liquid helium temperatures. The Al-implantation produces a curve resembling that of ...
la majorité des travaux réalisés sur AIN obtenu par implantation d'azote dans de l'aluminium a about...
The ability to transfer bulk quality III-N thin layers onto foreign platforms is a powerful strategy...
Afin de doper localement le carbure de silicium l implantation ionique est la seule méthode utilisab...
We present the first resistivity annealing curves of Al after implantation of Al-, H-, and O-ions at...
Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al th...
The recovery of electrical resistivity in aluminum following low temperature irradiation with reacto...
Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced supercondu...
Random alloys of C, Si, and Ge with Al, prepared by ion implantation at liquid helium temperatures, ...
It has been observed that blisters and flakes appear on a metal surface implanted He ions above a sp...
The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 12...
A study is presented of the effect of 5 keV helium ion bombardment on thin (about 2000 Å) aluminium ...
Aluminium foil was extended by tensile deformation at room temperature by amounts up to about 15% pl...
International audience4H- and 6H-SiC small samples were implanted by keV Al+ ions at room temperatur...
The activation energy for the electrical activation of 1×1019 cm-3 and of 1×1020 cm-3 ion implanted ...
This paper is devoted to the study of the surface hardness of pure Al implanted with molecular nitro...
la majorité des travaux réalisés sur AIN obtenu par implantation d'azote dans de l'aluminium a about...
The ability to transfer bulk quality III-N thin layers onto foreign platforms is a powerful strategy...
Afin de doper localement le carbure de silicium l implantation ionique est la seule méthode utilisab...
We present the first resistivity annealing curves of Al after implantation of Al-, H-, and O-ions at...
Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al th...
The recovery of electrical resistivity in aluminum following low temperature irradiation with reacto...
Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced supercondu...
Random alloys of C, Si, and Ge with Al, prepared by ion implantation at liquid helium temperatures, ...
It has been observed that blisters and flakes appear on a metal surface implanted He ions above a sp...
The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 12...
A study is presented of the effect of 5 keV helium ion bombardment on thin (about 2000 Å) aluminium ...
Aluminium foil was extended by tensile deformation at room temperature by amounts up to about 15% pl...
International audience4H- and 6H-SiC small samples were implanted by keV Al+ ions at room temperatur...
The activation energy for the electrical activation of 1×1019 cm-3 and of 1×1020 cm-3 ion implanted ...
This paper is devoted to the study of the surface hardness of pure Al implanted with molecular nitro...
la majorité des travaux réalisés sur AIN obtenu par implantation d'azote dans de l'aluminium a about...
The ability to transfer bulk quality III-N thin layers onto foreign platforms is a powerful strategy...
Afin de doper localement le carbure de silicium l implantation ionique est la seule méthode utilisab...