Abstract: InGaP/GaAs SHBTs have been fabricated and the device RF and noise performance has been measured. A small-signal model has been created from the S-parameters of the measured devices. Thermal and shot noise is added to create a first generation noise model, which shows good agreement with measured data. The devices (L=3x12 µm2) showed an FMIN = 1.68 dB at 6 GHz for VCE = 1.8 V and IC = 1.56 mA. 1
The internal low-frequency noise sources of AlGaAs/GaAs HBT's are related to the detailed epi-l...
This paper presents low frequency noise (LFN) measurements of some commonly used microwave transisto...
Low-Frequency (L.F.) noise experiments are performed on n-p-n GaInP/GaAs heterojunction bipolar tran...
High frequency (h.f.) noise characteristics of advanced InP and GaAs HBTs were measured and simulate...
Noise characterization of bipolar transistors is typically a lengthy and costly process. As a result...
ABSTRACT-- We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and...
DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transisto...
AlGaAs/GaAs HBTs with similar DC and microwave performance and different low-frequency noise and rel...
The high-frequency behavior of electronic devices is of major interest in the field of research and ...
International audienceInvited paper The modeling of microwave transistors in the field of RF and Mic...
Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from t...
This thesis studies: (i) the noise properties of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT...
Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transis...
The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated a...
In the present paper we evaluated the fabrication process of AlGaAs/GaAs heterojunction Bipolar Tran...
The internal low-frequency noise sources of AlGaAs/GaAs HBT's are related to the detailed epi-l...
This paper presents low frequency noise (LFN) measurements of some commonly used microwave transisto...
Low-Frequency (L.F.) noise experiments are performed on n-p-n GaInP/GaAs heterojunction bipolar tran...
High frequency (h.f.) noise characteristics of advanced InP and GaAs HBTs were measured and simulate...
Noise characterization of bipolar transistors is typically a lengthy and costly process. As a result...
ABSTRACT-- We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and...
DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transisto...
AlGaAs/GaAs HBTs with similar DC and microwave performance and different low-frequency noise and rel...
The high-frequency behavior of electronic devices is of major interest in the field of research and ...
International audienceInvited paper The modeling of microwave transistors in the field of RF and Mic...
Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from t...
This thesis studies: (i) the noise properties of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT...
Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transis...
The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated a...
In the present paper we evaluated the fabrication process of AlGaAs/GaAs heterojunction Bipolar Tran...
The internal low-frequency noise sources of AlGaAs/GaAs HBT's are related to the detailed epi-l...
This paper presents low frequency noise (LFN) measurements of some commonly used microwave transisto...
Low-Frequency (L.F.) noise experiments are performed on n-p-n GaInP/GaAs heterojunction bipolar tran...
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