This paper presents a test technique that employs two different supply voltages for the same Iddq pattern. The results of the two measurements are subtracted in order to eliminate the inherent subthreshold leakage. Summary of the experiment carried out on “System on a Chip ” (SOC) device build in 0.35m technology is also shown. These experiments proved that the method is effective in detecting failures not detectable with the single limit Iddq. 1
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
Silicon-On-Insulator (SOI) is emerging as a strong technology candidate for low-power high–performan...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
significantly. However, the properties of the power grid IDDQ or steady state current testing has be...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
ISBN: 0-7803-9205-1Although I/sub DDQ/ testing has become a widely accepted defect detection techniq...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
This thesis examines the impact of technology scaling, in the deep submicron regime, on the testabil...
The focus of this project is to study the application of new IDDQ testing schemes to deep-submicron ...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
The use of a single pass/fail threshold for IDDQ testing is unworkable as chip background currents i...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
Silicon-On-Insulator (SOI) is emerging as a strong technology candidate for low-power high–performan...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
significantly. However, the properties of the power grid IDDQ or steady state current testing has be...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
ISBN: 0-7803-9205-1Although I/sub DDQ/ testing has become a widely accepted defect detection techniq...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
This thesis examines the impact of technology scaling, in the deep submicron regime, on the testabil...
The focus of this project is to study the application of new IDDQ testing schemes to deep-submicron ...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
The use of a single pass/fail threshold for IDDQ testing is unworkable as chip background currents i...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
Silicon-On-Insulator (SOI) is emerging as a strong technology candidate for low-power high–performan...