This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This is accomplished by monitoring the operations of existing on-chip voltage regulators, which indirectly provides the IDDQ information. Equivalent IDDQ information is obtained by measuring an internal voltage signal of a regulator. Then, the measured data is shifted out using the IEEE 1149.1 standard. IDDQ based test methods are used to post-process those data for screening defective circuits. Experiments were successfully conducted assuming the TSMC 0.18μm CMOS technology. © 2006 IEEE
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
This paper explores the applicability of I_ddq testing to the field of analog circuits. An attempt i...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
An indirect current sensing technique for IDDQ and I DDT tests is proposed in this paper. This is ac...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
The paper describes the design for testability (DFT) of low voltage two stage operational transcondu...
The paper describes the design for testability (DFT) of low voltage two stage operational transcondu...
The monitoring of supply current in CMOS VLSI devices has been suggested as a tool for both detectin...
This paper presents the implementation of a built-in current sensor for ¿IDDQ testing. In contrast t...
This paper presents the implementation of a built-in current sensor for ¿IDDQ testing. In contrast t...
Abstract—This paper presents the implementation of a built-in current sensor for DDQ testing. In co...
A majority of defects found in CMOS technology display elevated quiescent current magnitudes but sti...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
This paper explores the applicability of I_ddq testing to the field of analog circuits. An attempt i...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
An indirect current sensing technique for IDDQ and I DDT tests is proposed in this paper. This is ac...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
This paper presents the implementation of a built-in current sensor that includes two recently repor...
The paper describes the design for testability (DFT) of low voltage two stage operational transcondu...
The paper describes the design for testability (DFT) of low voltage two stage operational transcondu...
The monitoring of supply current in CMOS VLSI devices has been suggested as a tool for both detectin...
This paper presents the implementation of a built-in current sensor for ¿IDDQ testing. In contrast t...
This paper presents the implementation of a built-in current sensor for ¿IDDQ testing. In contrast t...
Abstract—This paper presents the implementation of a built-in current sensor for DDQ testing. In co...
A majority of defects found in CMOS technology display elevated quiescent current magnitudes but sti...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
This paper explores the applicability of I_ddq testing to the field of analog circuits. An attempt i...