AbstractWe measured the photoluminescence (PL), the optical absorption and the magneto-optical absorption of β- FeSi2 single crystals which were fabricated by a chemical vapor transport method. The characteristic 0.8 eV-PL bands of β- FeSi2 thin films were not observed in our single crystals. However, we found new two PL lines (0.717 and 0.737 eV) and new two absorption peaks (0.858 and 0.909 eV) at low temperatures. All the samples which were measured in this study were classified into two groups according to the absorption peak energies. The two types of samples showed different absorption energies, but the magnetic field dependencies of the energy shifts are quite the same. Furthermore, the evaluated effective g factor is about 4 for bot...
We have clearly observed photoresponse properties in an Al/n-beta-FeSi2 structure using beta-FeSi2 s...
The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interes...
We have fabricated 200-nm-diameter ferromagnetic resonant tunneling diodes (FM-RTDs) using CaF2/Fe3S...
AbstractWe measured the photoluminescence (PL), the optical absorption and the magneto-optical absor...
AbstractWe have investigated phonon properties of some β-FeSi2 crystals with characteristic light em...
AbstractValence electronic structure of β-FeSi2 single crystal has been investigated by photoelectro...
We have fabricated a β-FeSi2 film by metalorganic chemical vapor deposition on a Si(001) substrate w...
We investigated the optical absorption of the fundamental band edge and the origin of the emission f...
AbstractEcological friendly β- FeSi2 thin film has been formed on FZ-Si (111) substrates using sinte...
100學年度研究獎補助論文[[abstract]]Self-catalyzed β-FeSi2 nanowires with a high aspect ratio have been synthes...
We have epitaxially grown undoped β-FeSi2 films on Si(111) substrates via atomic-hydrogen-assisted m...
FeSi is a non-magnetic narrow-gap semiconductor that can be doped n-type by Co, which also gives ris...
We have evaluated the diffusion length of minority carriers (holes) in single-crystalline n-type bet...
We present a comprehensive series of electrical transport (conductivity, magnetoresistance, and Hall...
AbstractWe have grown intentionally undoped β-FeSi2 thin films on Si(111) substrates by atomic hydro...
We have clearly observed photoresponse properties in an Al/n-beta-FeSi2 structure using beta-FeSi2 s...
The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interes...
We have fabricated 200-nm-diameter ferromagnetic resonant tunneling diodes (FM-RTDs) using CaF2/Fe3S...
AbstractWe measured the photoluminescence (PL), the optical absorption and the magneto-optical absor...
AbstractWe have investigated phonon properties of some β-FeSi2 crystals with characteristic light em...
AbstractValence electronic structure of β-FeSi2 single crystal has been investigated by photoelectro...
We have fabricated a β-FeSi2 film by metalorganic chemical vapor deposition on a Si(001) substrate w...
We investigated the optical absorption of the fundamental band edge and the origin of the emission f...
AbstractEcological friendly β- FeSi2 thin film has been formed on FZ-Si (111) substrates using sinte...
100學年度研究獎補助論文[[abstract]]Self-catalyzed β-FeSi2 nanowires with a high aspect ratio have been synthes...
We have epitaxially grown undoped β-FeSi2 films on Si(111) substrates via atomic-hydrogen-assisted m...
FeSi is a non-magnetic narrow-gap semiconductor that can be doped n-type by Co, which also gives ris...
We have evaluated the diffusion length of minority carriers (holes) in single-crystalline n-type bet...
We present a comprehensive series of electrical transport (conductivity, magnetoresistance, and Hall...
AbstractWe have grown intentionally undoped β-FeSi2 thin films on Si(111) substrates by atomic hydro...
We have clearly observed photoresponse properties in an Al/n-beta-FeSi2 structure using beta-FeSi2 s...
The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interes...
We have fabricated 200-nm-diameter ferromagnetic resonant tunneling diodes (FM-RTDs) using CaF2/Fe3S...