Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003.Includes bibliographical references (p. 92-95).by Guangrui Xia.S.M
Strain-Si technology is the most important technology to enhance mobility in the present complementa...
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future genera...
The objectives of this work are focused on the application of strained silicon on MOSFET transistor....
[[abstract]]A new mobility model, together with its extraction method for manufacturing strained-Si ...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineeing, 1989.Include...
Abstract: Although cryptography constitutes a considerable part of the overall security architecture...
textSince the introduction of MOSFETs into the integrated circuit (IC), performance has been improv...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
peer reviewedAs scaling of the critical transistor dimensions below 65 nm has been slowed down, the ...
This paper reports a detailed experimental and simulation study of the electron mobility enhancement...
This paper is made available online in accordance with publisher policies. Please scroll down to vie...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
A compressive strained SiGe channel grown-on-SOI structure which can be applicable to next generatio...
Electron mobility and drain current in a strained-Si MOSFET have been calculated and compared with t...
Abstract—In this paper, we describe a simple method to ex-tract the average drift mobility and the a...
Strain-Si technology is the most important technology to enhance mobility in the present complementa...
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future genera...
The objectives of this work are focused on the application of strained silicon on MOSFET transistor....
[[abstract]]A new mobility model, together with its extraction method for manufacturing strained-Si ...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineeing, 1989.Include...
Abstract: Although cryptography constitutes a considerable part of the overall security architecture...
textSince the introduction of MOSFETs into the integrated circuit (IC), performance has been improv...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
peer reviewedAs scaling of the critical transistor dimensions below 65 nm has been slowed down, the ...
This paper reports a detailed experimental and simulation study of the electron mobility enhancement...
This paper is made available online in accordance with publisher policies. Please scroll down to vie...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
A compressive strained SiGe channel grown-on-SOI structure which can be applicable to next generatio...
Electron mobility and drain current in a strained-Si MOSFET have been calculated and compared with t...
Abstract—In this paper, we describe a simple method to ex-tract the average drift mobility and the a...
Strain-Si technology is the most important technology to enhance mobility in the present complementa...
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future genera...
The objectives of this work are focused on the application of strained silicon on MOSFET transistor....
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