Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy
- Zhao L (Zhao Lei)
- Chen YH (Chen Yong-hai)
- Zuo YH (Zuo Yu-hua)
- Wang HN (Wang Hai-ning)
- Shi WH (Shi Wen-hua)
- Zhao, L, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
View in ORKG Publication date
January 2006Abstract
In the present review, the measuring principle of reflectance difference spectroscopy (RDS) is given. As a powerful tool in the surface and interface analysis technologies, the application of RDS to the research on semiconductor materials is summarized. along with the origins of the in-plane optical anisotropy of semiconductors. And it is believed that RDS will play an important role in the electrooptic modification of Si-based semiconductor materials