Spin torque transfer logic and memory design

Magnetic Tunnel Junction(MTJ) is a spintronic device that offers non volatile memory capable of fast read/write operation and high stability. Though these features look promising, the existing read-only MTJ based circuits with Sense Amplifiers may not be competitive in therms of performance and power as compared to other Dynamic and Static CMOS circuits. The goal of this research is to analyze the effectiveness of the existing read-only MTJ based look-up tables(LUTs) for realizing logic circuits. The research also develops a read circuit design for low power Spin Torque Transfer Random Access Memory(STTRAM) to support low power probabilistic write and early write termination methods