This thesis presents the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region. This thesis also conducts a comprehensive study and investigation on the high-frequency behaviours of the MOSFETs.Master of Engineerin
In this paper, a detailed research of the high-frequency noise sources and figures of merit (FOMs) o...
A model is proposed to account for the high-frequency characteristics of double-gate (DG) MOSFETs. P...
Concept of new compact model for the simulation of deep submicron (DSM), nanometer-scale MOFFET t...
Parameters limiting the improvement of high frequency characteristics for deep submicron MOSFETs wit...
This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and ...
[[abstract]]In this presentation, a new modeling technique to exactly describe the time-domain (TD) ...
Parameters limiting the improvement of high frequency characteristics for deep sub micron MOSFETs (b...
The behaviour of MESFET and HEMT devices in different frequency regions have been observed in the th...
At high frequency of gigahertz, the channel thermal noise is dominating the noise of MOSFETs. The ch...
This review paper assesses the main approaches in the electrical characterization of advanced MOSFET...
A novel approach to formulating unified compact threshold voltage and drain current models for deep-...
The low—frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with spec...
This report compiled all the work that had been done by the author during her Final Year Project sub...
The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over las...
An analytic high frequency model of SOI-MOSFETs is presented. By physically solving the non-quasi-st...
In this paper, a detailed research of the high-frequency noise sources and figures of merit (FOMs) o...
A model is proposed to account for the high-frequency characteristics of double-gate (DG) MOSFETs. P...
Concept of new compact model for the simulation of deep submicron (DSM), nanometer-scale MOFFET t...
Parameters limiting the improvement of high frequency characteristics for deep submicron MOSFETs wit...
This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and ...
[[abstract]]In this presentation, a new modeling technique to exactly describe the time-domain (TD) ...
Parameters limiting the improvement of high frequency characteristics for deep sub micron MOSFETs (b...
The behaviour of MESFET and HEMT devices in different frequency regions have been observed in the th...
At high frequency of gigahertz, the channel thermal noise is dominating the noise of MOSFETs. The ch...
This review paper assesses the main approaches in the electrical characterization of advanced MOSFET...
A novel approach to formulating unified compact threshold voltage and drain current models for deep-...
The low—frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with spec...
This report compiled all the work that had been done by the author during her Final Year Project sub...
The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over las...
An analytic high frequency model of SOI-MOSFETs is presented. By physically solving the non-quasi-st...
In this paper, a detailed research of the high-frequency noise sources and figures of merit (FOMs) o...
A model is proposed to account for the high-frequency characteristics of double-gate (DG) MOSFETs. P...
Concept of new compact model for the simulation of deep submicron (DSM), nanometer-scale MOFFET t...
View in ORKG