International audienceSpin-Transfer Torque Magnetic Tunnel Junctions (STT-MTJ) are devices featuring stochastic properties. They are promising candidates for non-volatile memory or true random number generators. To design reliable hybrid CMOS circuits including STT-MTJs, one needs to use a compact model accounting for its stochasticity in the circuit simulations. This paper proposes a compact model that accurately mimics the MTJ stochastic switching behavior and meets the needs of fast execution time. The relevance of such a model together with its fast execution velocity are illustrated with a bitstream generator
International audienceSuperparamagnetic tunnel junctions (SMTJs) are promising sources for the rando...
Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate...
Spin-transfer torque random access memory (STT-RAM) is gaining momentum as a promising technology fo...
This paper demonstrates an efficient use of Magnetic Tunnel Junctions as Stochastic Number Generator...
Spin transfer torque magnetic tunnel junction (STT-MTJ) has been considered as a promising candidate...
Spin transfer torque magnetic tunnel junction (STT-MTJ) has been considered as a promising candidate...
Hybrid integration of CMOS and non-volatile memory (NVM) devices has become the technology foundatio...
International audienceHigh endurance, high speed, scalability, low voltage, and CMOS-compatibility a...
Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory...
International audienceA hardware True Random Number Generator (TRNG) yields random numbers from a ph...
International audienceThis paper presents a full hardware implementation of a magnetic tunnel juncti...
International audienceSuperparamagnetic tunnel junctions are noise powered stochastic oscillators, w...
International audienceSpin-transfer torque magnetic memory (STT-MRAM) is currently under intense aca...
Spin-transfer torque random access memory (STT-RAM) has recently gained increased attentions from ci...
Spin-Transfer Torque Random Access Memory (STT-RAM) is a promising candidate for the next generation...
International audienceSuperparamagnetic tunnel junctions (SMTJs) are promising sources for the rando...
Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate...
Spin-transfer torque random access memory (STT-RAM) is gaining momentum as a promising technology fo...
This paper demonstrates an efficient use of Magnetic Tunnel Junctions as Stochastic Number Generator...
Spin transfer torque magnetic tunnel junction (STT-MTJ) has been considered as a promising candidate...
Spin transfer torque magnetic tunnel junction (STT-MTJ) has been considered as a promising candidate...
Hybrid integration of CMOS and non-volatile memory (NVM) devices has become the technology foundatio...
International audienceHigh endurance, high speed, scalability, low voltage, and CMOS-compatibility a...
Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory...
International audienceA hardware True Random Number Generator (TRNG) yields random numbers from a ph...
International audienceThis paper presents a full hardware implementation of a magnetic tunnel juncti...
International audienceSuperparamagnetic tunnel junctions are noise powered stochastic oscillators, w...
International audienceSpin-transfer torque magnetic memory (STT-MRAM) is currently under intense aca...
Spin-transfer torque random access memory (STT-RAM) has recently gained increased attentions from ci...
Spin-Transfer Torque Random Access Memory (STT-RAM) is a promising candidate for the next generation...
International audienceSuperparamagnetic tunnel junctions (SMTJs) are promising sources for the rando...
Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate...
Spin-transfer torque random access memory (STT-RAM) is gaining momentum as a promising technology fo...