An impact of frequency on capacitances of partially-depleted SOI MOSFETs
- Tomaszewski, D.
- Łukasik, L.
- Zaręba, A.
- Jakubowski, A.
View in ORKG Publication date
January 2000 Publisher
Instytut Łączności - Państwowy Instytut BadawczyAbstract
A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are particularly responsible for dependence of device admittances on frequency are briefly described. Several C-V characteristics of the SOI MOSFET calculated for a wide range of frequencies, preliminary results of numerical analysis and of measurements and brief analysis of the results are presented. Methods of model improvement are proposed