Magnetic Tunnel Junction(MTJ) is a spintronic device that offers non volatile memory\ud capable of fast read/write operation and high stability. Though these features look\ud promising, the existing read-only MTJ based circuits with Sense Amplifiers may not\ud be competitive in therms of performance and power as compared to other Dynamic\ud and Static CMOS circuits. The goal of this research is to analyze the effectiveness\ud of the existing read-only MTJ based look-up tables(LUTs) for realizing logic circuits.\ud The research also develops a read circuit design for low power Spin Torque Transfer\ud Random Access Memory(STTRAM) to support low power probabilistic write and\ud early write termination methods
Abstract—Resistive Computation was suggested by [6] as an idea for tacking the power wall by replaci...
Abstract—Resistive Computation was suggested by [6] as an idea for tacking the power wall by replaci...
International audienceA novel nonvolatile flip-flop based on spin-orbit torque magnetic tunnel junct...
With traditional complementary metal oxide semiconductor (CMOS)-based devices and switching methods...
International audienceMagnetic Random Access Memory (MRAM) is a promising candidate to be the univer...
MRAM technology provides a combination of fast access time, non-volatility, data retention and endur...
International audienceHigh endurance, high speed, scalability, low voltage, and CMOS-compatibility a...
Spin-transfer torque (STT) random access memory has been researched as a promising alternative for s...
Spin Transfer Torque (STT) switching realized using a Magnetic Tunnel Junction (MTJ) device has show...
Spin-transfer torque magnetic random access memories (STT-MRAMs) based on magnetic tunnel junction (...
In recent years, spin transfer torque (STT)-magnetic random access memory (MRAM) was seen as one of ...
Abstract—The use of spin-transfer torque (STT) devices for memory design has been a subject of resea...
The scaling down of IC\u27s based on CMOS technology faces significant challenges due to technology ...
Avec la diminution du nœud de la technologie CMOS, la puissance statique et dynamique augmente spect...
This thesis presents the modeling and design of memory cells for Spin Torque Transfer Magnetoresisti...
Abstract—Resistive Computation was suggested by [6] as an idea for tacking the power wall by replaci...
Abstract—Resistive Computation was suggested by [6] as an idea for tacking the power wall by replaci...
International audienceA novel nonvolatile flip-flop based on spin-orbit torque magnetic tunnel junct...
With traditional complementary metal oxide semiconductor (CMOS)-based devices and switching methods...
International audienceMagnetic Random Access Memory (MRAM) is a promising candidate to be the univer...
MRAM technology provides a combination of fast access time, non-volatility, data retention and endur...
International audienceHigh endurance, high speed, scalability, low voltage, and CMOS-compatibility a...
Spin-transfer torque (STT) random access memory has been researched as a promising alternative for s...
Spin Transfer Torque (STT) switching realized using a Magnetic Tunnel Junction (MTJ) device has show...
Spin-transfer torque magnetic random access memories (STT-MRAMs) based on magnetic tunnel junction (...
In recent years, spin transfer torque (STT)-magnetic random access memory (MRAM) was seen as one of ...
Abstract—The use of spin-transfer torque (STT) devices for memory design has been a subject of resea...
The scaling down of IC\u27s based on CMOS technology faces significant challenges due to technology ...
Avec la diminution du nœud de la technologie CMOS, la puissance statique et dynamique augmente spect...
This thesis presents the modeling and design of memory cells for Spin Torque Transfer Magnetoresisti...
Abstract—Resistive Computation was suggested by [6] as an idea for tacking the power wall by replaci...
Abstract—Resistive Computation was suggested by [6] as an idea for tacking the power wall by replaci...
International audienceA novel nonvolatile flip-flop based on spin-orbit torque magnetic tunnel junct...