Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1994.Includes bibliographical references (leaves 127-133).by Hang Hu.Ph.D
Abstract. Modelling of the increase of MOSFET transwnductance produced by electron-velocity overshoo...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineeing, 1989.Include...
Abstract—Carrier velocity in the MOSFET channel is the main driving force for improved transistor pe...
The authors report on the exptl. detn. of inversion electron charge d., silicon surface potential, a...
Contains research summary.Joint Services Electronics Program (Contract DAALO3-86-K-0002
Thesis: M.S., Massachusetts Institute of Technology, Department of Electrical Engineering and Comput...
The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated usi...
The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated usi...
Nous décrivons des mesures à large bande en ondes sousmillimétriques (5-30 cm-1) de la conductivité ...
Contains report on one research project.Joint Services Electronics Program (Contract DAAL03-86-K-000...
The electron saturation velocity in Silicon MOS transistors with channel lengths in the range 0.1-0....
Measurements of the temperature and carrier-density dependence of the strongly localized conductance...
his thesis contains the result of an experimental study on the transport properties of high quality ...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Abstract. Modelling of the increase of MOSFET transwnductance produced by electron-velocity overshoo...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineeing, 1989.Include...
Abstract—Carrier velocity in the MOSFET channel is the main driving force for improved transistor pe...
The authors report on the exptl. detn. of inversion electron charge d., silicon surface potential, a...
Contains research summary.Joint Services Electronics Program (Contract DAALO3-86-K-0002
Thesis: M.S., Massachusetts Institute of Technology, Department of Electrical Engineering and Comput...
The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated usi...
The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated usi...
Nous décrivons des mesures à large bande en ondes sousmillimétriques (5-30 cm-1) de la conductivité ...
Contains report on one research project.Joint Services Electronics Program (Contract DAAL03-86-K-000...
The electron saturation velocity in Silicon MOS transistors with channel lengths in the range 0.1-0....
Measurements of the temperature and carrier-density dependence of the strongly localized conductance...
his thesis contains the result of an experimental study on the transport properties of high quality ...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Abstract. Modelling of the increase of MOSFET transwnductance produced by electron-velocity overshoo...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineeing, 1989.Include...
View in ORKG