Mask topography effects need to be taken into consideration for a more accurate solution of source mask optimization (SMO) in advanced optical lithography. However, rigorous 3D mask models generally involve intensive computation and conventional SMO fails to manipulate the mask-induced undesired phase errors that degrade the usable depth of focus (uDOF) and process yield. In this work, an optimization approach incorporating pupil wavefront aberrations into SMO procedure is developed as an alternative to maximize the uDOF. We first design the pupil wavefront function by adding primary and secondary spherical aberrations through the coefficients of the Zernike polynomials, and then apply the conjugate gradient method to achieve an optimal sou...
Conducted between December 2009 and December 2012 within the RET (resolution enhancement technology)...
Réalisée entre décembre 2009 et décembre 2012 au sein de STMicroelectronics Crolles dans l’équipe RE...
Rigorous simulation of light diffraction from optical and EUV masks predicts phase effects with an a...
Mask topography effects need to be taken into consideration for more advanced resolution enhancement...
Mask topography effects need to be taken into consideration for more advanced resolution enhancement...
Optical lithography has enabled the printing of progressively smaller circuit patterns over the year...
As semiconductor optical lithography is pushed to smaller dimensions, resolution enhancement techniq...
Proceedings of S P I E - the International Society for OpticalNew degrees of freedom can be optimize...
With the development and production of integrated circuits at the 22nm node, optical lithography fac...
Optical lithography is facing a great challenge from the continuous shrinkage of industry node towar...
Optical lithography is facing a great challenge from the continuous shrinkage of industry node towar...
Optical proximity correction (OPC) is one of the most widely used Resolution Enhancement Techniques ...
Lithography techniques have long been the driving power for the advancement of Moore’s law for the s...
Following moore\u27s law, microelectronic fabrication techniques have been developed to fabricate de...
The optical lithography is facing great challenge from the continuous shrinkage of the technology no...
Conducted between December 2009 and December 2012 within the RET (resolution enhancement technology)...
Réalisée entre décembre 2009 et décembre 2012 au sein de STMicroelectronics Crolles dans l’équipe RE...
Rigorous simulation of light diffraction from optical and EUV masks predicts phase effects with an a...
Mask topography effects need to be taken into consideration for more advanced resolution enhancement...
Mask topography effects need to be taken into consideration for more advanced resolution enhancement...
Optical lithography has enabled the printing of progressively smaller circuit patterns over the year...
As semiconductor optical lithography is pushed to smaller dimensions, resolution enhancement techniq...
Proceedings of S P I E - the International Society for OpticalNew degrees of freedom can be optimize...
With the development and production of integrated circuits at the 22nm node, optical lithography fac...
Optical lithography is facing a great challenge from the continuous shrinkage of industry node towar...
Optical lithography is facing a great challenge from the continuous shrinkage of industry node towar...
Optical proximity correction (OPC) is one of the most widely used Resolution Enhancement Techniques ...
Lithography techniques have long been the driving power for the advancement of Moore’s law for the s...
Following moore\u27s law, microelectronic fabrication techniques have been developed to fabricate de...
The optical lithography is facing great challenge from the continuous shrinkage of the technology no...
Conducted between December 2009 and December 2012 within the RET (resolution enhancement technology)...
Réalisée entre décembre 2009 et décembre 2012 au sein de STMicroelectronics Crolles dans l’équipe RE...
Rigorous simulation of light diffraction from optical and EUV masks predicts phase effects with an a...