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published_or_final_versionElectrical and Electronic EngineeringDoctoralDoctor of Philosoph
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published_or_final_versionElectrical and Electronic EngineeringDoctoralDoctor of Philosoph
The main cause of operational degradation in MOS de-vices is believed to be due to the buildup of ch...
Leakage current reduction is of primary importance as the technology scaling trends continue towards...
RSM conference series has become the prominent international forum on semiconductor electronics embr...
published_or_final_versionElectrical and Electronic EngineeringDoctoralDoctor of Philosoph
This thesis will explore the various oxide degradations induced by the electric field stress in 51A ...
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circui...
"Increased power dissipation is one of the major issue for today’s chip designers. Gate leakage acro...
The gate leakage (I Gate, table 1) is reduced compared to the conventional 65nm process with SiON di...
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-C...
From calculations of semiconductor interface charge, oxide voltage and tunneling currents for MOS sy...
85 p.In this dissertation, we mainly focus on characterization of gate oxide breakdown and understan...
A carrier-based analytic drain current model incorporating velocity saturation for undoped surroundi...
The thesis presents an experimental and theoretical investigation of gate oxide breakdown in MOS net...
Abstract—In nanoscale complementary metal–oxide– semiconductor (CMOS) devices, a significant increas...
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
The main cause of operational degradation in MOS de-vices is believed to be due to the buildup of ch...
Leakage current reduction is of primary importance as the technology scaling trends continue towards...
RSM conference series has become the prominent international forum on semiconductor electronics embr...
published_or_final_versionElectrical and Electronic EngineeringDoctoralDoctor of Philosoph
This thesis will explore the various oxide degradations induced by the electric field stress in 51A ...
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circui...
"Increased power dissipation is one of the major issue for today’s chip designers. Gate leakage acro...
The gate leakage (I Gate, table 1) is reduced compared to the conventional 65nm process with SiON di...
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-C...
From calculations of semiconductor interface charge, oxide voltage and tunneling currents for MOS sy...
85 p.In this dissertation, we mainly focus on characterization of gate oxide breakdown and understan...
A carrier-based analytic drain current model incorporating velocity saturation for undoped surroundi...
The thesis presents an experimental and theoretical investigation of gate oxide breakdown in MOS net...
Abstract—In nanoscale complementary metal–oxide– semiconductor (CMOS) devices, a significant increas...
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
The main cause of operational degradation in MOS de-vices is believed to be due to the buildup of ch...
Leakage current reduction is of primary importance as the technology scaling trends continue towards...
RSM conference series has become the prominent international forum on semiconductor electronics embr...