Design and Performance Analysis of Magnetic Adder and 16-Bit MRAM Using Magnetic Tunnel Junction Transistor

The scaling down of IC\u27s based on CMOS technology faces significant challenges due to technology advancing factors. The stand-by power becomes comparable to active power due to the increasing leakage current. Power gating and various low-power schemes have been proposed in the past to reduce the stand-by power in CMOS designs. As most random access memory (RAM) used for primary storage in personal computers is volatile memory, which needs constant voltage (power on) to store the data and results in a higher stand-by power. Magnetic Tunnel Junctions (MTJ) transistor has feature of non-volatility, endurance and high density, which makes it possible for next-generation logic and memory chips that do not need to have its memory content periodically refreshed. This thesis discusses design and performance analysis of magnetic logic gates, adders and memories using MTJs. Ultra-low stand-by power and dynamic power are observed and presented using MTJs