A method to extend the validity of quasi-static SOI MOSFET models

This paper describes a method to model thin-film fully-depleted (FD) silicon-on-insulator (SOI) MOSFETs at frequencies where the quasi-static model is no longer valid. The method consists in considering a cascade of several elementary MOSFET transistors or sections and applying the quasi-static analysis to each section. Important second-order effects such as mobility degradation and velocity saturation are considered in each individual section. Two different approaches to choose the dimensions of each section are analyzed. This technique is compared to a complete quasi-static analysis and results are discussed. Also, scattering parameters measurements are presented