Influence of HALO implantation on analog performances and comparison between bulk, Partially-Depleted and Fully-Depleted MOSFETs
- Vancaillie, Laurent
- Kilchytska, Valeriya
- Levacq, David
- Adriaensen, Stéphane
- van Meer, Hans
- De Meyer, K.
- Torrese, Guido
- Raskin, Jean-Pierre
- Flandre, Denis
- 2002 IEEE International SOI Conference
View in ORKG Publication date
January 2002
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
The influence of HALO implantation on analog device characteristics has been studied and compared for bulk, PD and FD SOI MOSFETs. It has been shown that whereas HALO implantation is needed for base-band applications preferably using longer channel, it has a detrimental effect for high-speed applications using minimum channel length transistors in strong inversion