Figures-of-Merit Of Intrinsic, Standard-Doped And Graded-Channel SOI And SOS MOSFETs For Analog Baseband And RF Applications

Figures-of-merit of non-standard channel engineered devices are presented. We put emphasis on effective analog baseband and RF performance from a circuit designer point of view. Measurements on 0.5 μm Fully-Depleted SOI and SOS processes are discussed. We demonstrate very interesting potential of low-doped and graded-channel devices to lower power consumption and increase gain and frequency performance