High-sensitivity switched-current sensing circuit for magnetic tunnel junction MRAM
- Au, Edward Kwok Sum
- Ki, Wing Hung
- Mow, Wai Ho
- Hung, ST
- Wong, CY
View in ORKG Publication date
January 2003Abstract
A high-sensitivity switched-current sensing circuit for reading data non-destructively from 1T-1MTJ magneto-resistive random access memory (MRAM) is presented. Compared to the existing sensing circuits at a power supply of 3.0V, simulation results showed that the read access time and the power consumption are about 3 times faster and smaller