Silicon-On-Insulator (SOI) technology, which was originally developed for military applications, is finally emerging as a mainstream semiconductor technology. Potential applications such as SRAM, lower power logic and RF IC have been demonstrated by major semiconductor companies. In this thesis, many remaining issues ranging from device physics to circuit modeling have been addressed. The impacts of silicon film thickness and channel width scaling on Re-oxidized MESA isolation were studied. The subthreshold characteristics and narrow width effect are explained through the geometry of device edge resulted from the sidewall reoxidation. Several major issues of floating body SOI MOSFET's are addressed in this thesis. The frequency dispersion...
This paper describes a unified framework to model the floating-body effects of various SOI MOSFET op...
Abstract — SOI means Silicon on Insulator. This type of transistors has Silicon-Insulator-Silicon su...
Bulk CMOS is currently the dominant technology for VLSI integrated circuits but its scaling constrai...
Traditional scaling methodology which utilizes channel doping, shallow junctions, etc. is no longer ...
The charge coupling between the front and back gates is a fundamental property of any fully-depleted...
A large signal capacitance model for thin film SOI/MOSFETs was developed based on the special thin f...
Silicon-on-insulator (SOI) technology is an effective approach of mitigating the short channel effec...
The charge coupling between the gate and substrate is a fundamental property of any fully-depleted s...
An accurate submicrometer MOSFET device model for Silicon-On-Insulator (SOI) technology suitable for...
A compact submicrometer Fully Depleted Silicon-On-Insulator (FDSOI) and Nearly FDSOI MOSFET device m...
As bulk CMOS is approaching its scaling limit, SOI CMOS is gaining more and more attentions and is c...
A new analytical model for SOI MOSFET with floating-body-effect(FBE) is developed to described the S...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer ...
grantor: University of TorontoLow power electronics is critical in portable applications. ...
SOI-MOSFET is a candidate for next generation integrated circuit technology due to its reduced junct...
This paper describes a unified framework to model the floating-body effects of various SOI MOSFET op...
Abstract — SOI means Silicon on Insulator. This type of transistors has Silicon-Insulator-Silicon su...
Bulk CMOS is currently the dominant technology for VLSI integrated circuits but its scaling constrai...
Traditional scaling methodology which utilizes channel doping, shallow junctions, etc. is no longer ...
The charge coupling between the front and back gates is a fundamental property of any fully-depleted...
A large signal capacitance model for thin film SOI/MOSFETs was developed based on the special thin f...
Silicon-on-insulator (SOI) technology is an effective approach of mitigating the short channel effec...
The charge coupling between the gate and substrate is a fundamental property of any fully-depleted s...
An accurate submicrometer MOSFET device model for Silicon-On-Insulator (SOI) technology suitable for...
A compact submicrometer Fully Depleted Silicon-On-Insulator (FDSOI) and Nearly FDSOI MOSFET device m...
As bulk CMOS is approaching its scaling limit, SOI CMOS is gaining more and more attentions and is c...
A new analytical model for SOI MOSFET with floating-body-effect(FBE) is developed to described the S...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer ...
grantor: University of TorontoLow power electronics is critical in portable applications. ...
SOI-MOSFET is a candidate for next generation integrated circuit technology due to its reduced junct...
This paper describes a unified framework to model the floating-body effects of various SOI MOSFET op...
Abstract — SOI means Silicon on Insulator. This type of transistors has Silicon-Insulator-Silicon su...
Bulk CMOS is currently the dominant technology for VLSI integrated circuits but its scaling constrai...