The small signal characteristics in the frequency domain are investigated to quantify the impact of floating body on analog circuits. An enhancement of output resistance at a high frequency in partially depleted devices is observed and is attributed to the floating body potential fluctuation under the influence of hole accumulation in the neutral body and gate coupling. At a high current level, self-heating effect overrides the floating body effect and decreases the output resistance at a high frequency
In this paper, the Southampton Thermal Analogue (STAG) compact model for partially depleted (PD) sil...
The aims of the work presented in this thesis are twofold: to characterise the dynamic behaviour of ...
Frequency variation of the output conductance in advanced fully depleted SOI and multiple-gate MOSFE...
This paper describes the characterization of transient floating body effect in Non-fully Depleted SO...
We report a frequency-dependent output conductance of partially depleted SOI MOSFET's. For high-freq...
This paper describes a unified framework to model the floating-body effects of various SOI MOSFET op...
The transconductance of fully depleted SOI MOSFETs may feature a sudden drop to zero. This surprisin...
This paper investigates the influence of the silicon substrate. on the ac characteristics of silicon...
This paper analyses the frequency dependence of the output conductance (G(d)) of several partially d...
A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are partic...
A new analytical model for SOI MOSFET with floating-body-effect(FBE) is developed to described the S...
Investigations of floating body behaviour of partially depleted (PD) SOI MOSFETs have established th...
Silicon-On-Insulator (SOI) technology, which was originally developed for military applications, is ...
Performance of RF integrated circuit (IC) is directly linked to the analogue and high frequency char...
A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are partic...
In this paper, the Southampton Thermal Analogue (STAG) compact model for partially depleted (PD) sil...
The aims of the work presented in this thesis are twofold: to characterise the dynamic behaviour of ...
Frequency variation of the output conductance in advanced fully depleted SOI and multiple-gate MOSFE...
This paper describes the characterization of transient floating body effect in Non-fully Depleted SO...
We report a frequency-dependent output conductance of partially depleted SOI MOSFET's. For high-freq...
This paper describes a unified framework to model the floating-body effects of various SOI MOSFET op...
The transconductance of fully depleted SOI MOSFETs may feature a sudden drop to zero. This surprisin...
This paper investigates the influence of the silicon substrate. on the ac characteristics of silicon...
This paper analyses the frequency dependence of the output conductance (G(d)) of several partially d...
A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are partic...
A new analytical model for SOI MOSFET with floating-body-effect(FBE) is developed to described the S...
Investigations of floating body behaviour of partially depleted (PD) SOI MOSFETs have established th...
Silicon-On-Insulator (SOI) technology, which was originally developed for military applications, is ...
Performance of RF integrated circuit (IC) is directly linked to the analogue and high frequency char...
A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are partic...
In this paper, the Southampton Thermal Analogue (STAG) compact model for partially depleted (PD) sil...
The aims of the work presented in this thesis are twofold: to characterise the dynamic behaviour of ...
Frequency variation of the output conductance in advanced fully depleted SOI and multiple-gate MOSFE...