Dependence On Volume Of The Phonon Frequencies And The Ir Effective Charges Of Several Iii-v Semiconductors

The mode Grüneisen parameters of the LO and TO Raman phonons of AlN, BN, and BP, and the dependence of eT* on lattice constant have been measured by Raman scattering in a diamond anvil cell. The results for eT* are interpreted by means of pseudopotential calculations of eT* versus lattice constant. © 1983 The American Physical Society.2884579458