Nonequilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs
- Watling, J.R.
- Zhao, Y.P.
- Asenov, A.
- Barker, J.R.
View in ORKG Publication date
January 2000
DOI Publisher
Institute of Electrical and Electronics EngineersAbstract
Using 2D full-band MC simulations the authors study nonequilibrium transport effects and the performance potential of well tempered Si p-channel MOSFETs covering gate lengths ranging from 90nm to 25nm. By comparing MC simulations with carefully calibrated drift diffusion (DD) simulations of the same devices, they provide a quantitative estimate of the importance and the influence of nonequilibrium transport on the device performance