DC and RF Performance of Gallium Arsenide MESFET

Gallium arsenide transistors have a distinct advantage over silicon in terms of speed, with much higher electron mobility that causes greater saturation velocity at low electric field. Techniques such as etching, lithography and metal deposition used for the fabrication of gallium arsenide metal-semiconductor field effect transistors (GaAs MESFETs), and DC and RF performance of fabricated MESFETs, are investigated for different device geometry, specifically drain-source channel length.unpublishednot peer reviewedU of I OnlyUndergraduate senior thesis not recommended for open acces