The properties of the Shipley AZ-1350B positive photoresist used with the Shipley AZ-303A developer were investigated. It was found that the use of AZ-303A developer results in a significant improvement of the sensitivity and the linearity of the photoresist. The unexposed etch rate of the photoresist was 35 Å ± 5 Å/sec. Gratings of high efficiency have been successfully fabricated using the above combination of photoresist and developer
In this series of experiments, we add salt to a photoresist developer and observe the effect on phot...
A study was conducted in which a series ofexperiments were performed using three positive photoresis...
A silylation process employing hexamethyldisilazane (HMDS\u3e as a silylating agent was examined as ...
Regardless of profile, whether flat topped or pointed, to the summit observer all mountain peaks cas...
Wafertrac processing was used to optimize the photolithographic process of Shipley 812 positive phot...
Undyed, AZ 1512,and dyed, AZ 1512-SFD, photoresist was coated on aluminum covered oxide topography. ...
A mechan ism for the deve lopment of positive optical photoresists is proposed, leading to the deriv...
A method of determining photoresist image modulation was investigated and utilized, in determining t...
The continuous miniaturization in microelectronics requires advanced materials and processes that al...
Aluminum pattern definition was evaluated using AZ5214E photoresfst 1n conventional posfttve and ima...
An important goal of the microelectronics industry is to make new technological advances while keepi...
Positive resist coated wafers were Immersed in a dilute alkaline base developer, such as 5:1 AZ351, ...
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2008.Includes bibliographica...
Chemically Amplified Advanced Negative Resist for G line application was evaluated under three diffe...
ZEP brand electron beam resists are well-known for their high sensitivity and etch durability. The v...
In this series of experiments, we add salt to a photoresist developer and observe the effect on phot...
A study was conducted in which a series ofexperiments were performed using three positive photoresis...
A silylation process employing hexamethyldisilazane (HMDS\u3e as a silylating agent was examined as ...
Regardless of profile, whether flat topped or pointed, to the summit observer all mountain peaks cas...
Wafertrac processing was used to optimize the photolithographic process of Shipley 812 positive phot...
Undyed, AZ 1512,and dyed, AZ 1512-SFD, photoresist was coated on aluminum covered oxide topography. ...
A mechan ism for the deve lopment of positive optical photoresists is proposed, leading to the deriv...
A method of determining photoresist image modulation was investigated and utilized, in determining t...
The continuous miniaturization in microelectronics requires advanced materials and processes that al...
Aluminum pattern definition was evaluated using AZ5214E photoresfst 1n conventional posfttve and ima...
An important goal of the microelectronics industry is to make new technological advances while keepi...
Positive resist coated wafers were Immersed in a dilute alkaline base developer, such as 5:1 AZ351, ...
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2008.Includes bibliographica...
Chemically Amplified Advanced Negative Resist for G line application was evaluated under three diffe...
ZEP brand electron beam resists are well-known for their high sensitivity and etch durability. The v...
In this series of experiments, we add salt to a photoresist developer and observe the effect on phot...
A study was conducted in which a series ofexperiments were performed using three positive photoresis...
A silylation process employing hexamethyldisilazane (HMDS\u3e as a silylating agent was examined as ...